Events
On behalf of the conference organizing committee,
we invite you to the virtual Photonics North Conference on May 26-28,
2020. In the midst of a global crisis,
we look forward to meeting with all of you, our colleagues, as we carry on with
the work of advancing optical science and engineering. Join us for outstanding
plenary talks from inspirational thought leaders. Join us for the very best
work from respected and established researchers. Join us for talks from
emerging researchers, presenting what is surely the opening work of brilliant,
burgeoning careers.
Photonics and optics are finally seeing widespread adoption and significant growth into new markets. Photonic devices are being applied to sensing, communications, and even quantum computing. High speed fiber optics and highly integrated subsystems are essential to the rollout of 5G systems. There has never been a better time for research, development, and training in photonics and Photonics North is essential for developing and promoting the ecosystem.
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Conference Chairs
Gord Harling
President and CEO, CMC Microsystems   Â
P. Scott Carney
The Institute of Optics, University of Rochester​   Â
The IEEE Reliability Society & Power Electronics  A Novel Maximum Power Point Tracking (MPPT) Technique for Photovoltaic Solar Panels By  Mahdi Ranjbar DATE:      July 7, 2020 TIME:       18 – 19:30.     A  Mahdi
A link will be sent to you a day before the event. Â |
Speaker:        Dr : Marin Soljacic, MIT
Date:Â Â Â Â Â Â Â Â Â Â Â Wednesday
Aug 12th, 2020
Time: Â Â Â Â Â Â Â Â Â Â Â 12:00
noon to 13:00
Title of the talk: Â Â Â Photonics:
a great testing-ground to develop new AI algorithms for science
IEEE Ottawa Section: MTT-S / AP-S Chapter presents:
Title: Characterization and Modeling of GaN HEMT Trapping Effects for Microwave Circuit Design
Date: September 2nd, 2020
Time: 11 AM (ET)
Register at: https://events.vtools.ieee.org/m/238482
This talk will review some recent advancements achieved on the characterization and modelling of the trapping effects felt in GaN HEMT transistors, and their impact on microwave circuit design. Because of their nowadays importance, a particular attention will be payed to applications on high power amplifiers for mobile wireless infrastructure and pulsed radar applications.
For that, the talk will start by recollecting the most common model formulations adopted for the various levels of RF engineering, from the device level (physics) to the transistor (circuit) and amplifier (system) level. Starting by the Shockley-Read-Hall capture and emission processes we will be able to understand one of the fundamental signatures of trapping effects, the significantly different charge and discharging time constants, and its impact on power amplifier nonlinear distortion behavior. Then, some widely adopted approaches of the channel current transients’ characterization are addressed and the talk concludes by presenting some illustrative cases of application to RF high power amplifiers.
Speaker: Jose C. Pedro
José C. Pedro received the Diploma, Ph.D., and Habilitation degrees in electronics and telecommunications engineering from the Universidade de Aveiro, Aveiro, Portugal, in 1985, 1993, and 2002, respectively.
He is currently a Full Professor with the Universidade de Aveiro and head of the Aveiro site of the Instituto de Telecomunicações. He has authored 2 books and authored or co-authored more than 200 papers in international journals and symposia. His current research interests include active device modelling and the analysis and design of various nonlinear microwave circuits.
Dr. Pedro was a recipient of various prizes including the 1993 Marconi Young Scientist Award, the 2000 Institution of Electrical Engineers Measurement Prize, the 2015 EuMC Best Paper Microwave Prize, and the Microwave Distinguished Educator Award. He has served the scientific community as a Reviewer and an Editor for several conferences and journals, namely, the IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, for which he was the Editor-in-Chief.