Events

2 Wed
All day
00:00
01:00
02:00
03:00
04:00
05:00
06:00
07:00
08:00
09:00
10:00
11:00
12:00
13:00
14:00
15:00
16:00
17:00
18:00
19:00
20:00
21:00
22:00
23:00
11:00 Characterization and Modeling of GaN HEMT Trapping Effects for Microwave Circuit Design
Characterization and Modeling of GaN HEMT Trapping Effects for Microwave Circuit Design
Sep 2 @ 11:00 – 12:00
Characterization and Modeling of GaN HEMT Trapping Effects for Microwave Circuit Design
  IEEE Ottawa Section: MTT-S / AP-S Chapter presents: Title: Characterization and Modeling of GaN HEMT Trapping Effects for Microwave Circuit Design Date: September 2nd, 2020 Time: 11 AM (ET) Register at: https://events.vtools.ieee.org/m/238482 This talk[...]
IEEE Ottawa Section Logo

© Copyright 2020 IEEE – All rights reserved. Use of this website signifies your agreement to the IEEE Terms and Conditions.

A not-for-profit organization, IEEE is the world's largest technical professional organization dedicated to advancing technology for the benefit of humanity.