IEEE Ottawa Seminar Series on AI and Machine Learning – Sponsored by IEEE Ottawa CS Chapter, ComSoc Chapter, and SP Chapter, jointly with Vitesse- Reskilling
Oct 19 @ 00:07 – 01:07

Date Wednesday, Oct 30, 2019

Location 359 Terry Fox Drive, Kanata, Ontario


       11:30 AM – 12:00 PM: Light Lunch and Networking

       12:00 PM – 1:00 PM  : Presentation and Q&A

1:00 PM – 1:30 PM    : Post Presentation Networking

Title of the Talk AI-Powered 5G Networks
& Beyond

Speaker  Hatem Abou-zeid 


5G Networks are anticipated
to transform modern societies by providing an ultra-reliable, high-speed
communications infrastructure that will connect billions of devices including
vehicles, machines, and sensors. Both the complexity of such networks and the
diversity of application requirements will be unprecedented. This mandates
novel, autonomous network configuration and operation that can anticipate and
react to changes in traffic, topology, and interference conditions to ensure
seamless quality of experience and reliability. In this talk I will discuss
AI-driven networking use-cases elaborating on the practical challenges of
industrial deployments. I will then highlight directions where research is
needed to further expedite and facilitate the development of AI-powered


Hatem Abou-zeid is a
Senior 5G Systems Designer at Ericsson Canada where he drives research and
system development for 5G radio access networks. Prior to that he held
industrial positions at CISCO Systems and Bell Labs in addition to postdoctoral
and research assistant affiliations at Queen’s University, Canada. His research
focuses on the application of machine learning in 5G networks with particular
emphasis on anticipatory and adaptive algorithms drawing on methods from
reinforcement learning, spatio-temporal forecasting, deep learning and
stochastic optimization. Dr. Abou-zeid is very passionate about developing
strong industry-university collaborations that foster applied, innovative
research, and he leads multiple academic partnerships on intelligence and
analytics in future networks.

Advanced semiconductor lasers: Ultra-low operating energy and heterogeneous integration with Si photonics devices @ University of Ottawa, Room 223
Dec 3 @ 13:00 – 14:00

IEEE Photonics Society Distinguished Lecturer Program

Advanced semiconductor lasers:Ultra-low operating energy and heterogeneous integration with Si photonics devices

Shinji Matsuo, NTT Photonics Laboratories, Japan

Abstract: The electrical power consumed in data transmission systems is now hampering efforts to further increase the speed and capacity at various scales, ranging from data centers to microprocessors. Optical interconnects employing an ultralow energy directly modulated lasers will play a key role in reducing the power consumption. Since a laser’s operating energy is proportional to the size of its active volume, developing high-performance lasers with a small cavity is important. For this purpose, we have developed membrane DFB and photonic crystal (PhC) lasers, in which active regions are buried with InP layer. Thanks to the reduction of cavity size and the increase in optical confinement factor, we have achieved extremely small operating energy and demonstrated 4.4-fJ/bit operating energy by employing wavelength-scale PhC cavity. Reduction of the cost is also important issue because huge number of transmitters are required for short distance optical links. For this purpose, Si photonics technology is expected to be a potential solution because it can provide large-scale phonic integrated circuits (PICs), which can reduce the assembly cost compared with transmitters constructed by discrete devices. Therefore, heterogeneous integration of III-V compound semiconductors and Si has attracted much attention. For fabricating these devices, we have developed wafer-scale fabrication procedure that employs regrowth of III-V compound semiconductors on directly bonded thin InP template on SiO2/Si substrate. A key to realize high-quality epitaxial layer is total thickness, which must be below the critical thickness, typically 430 nm. Thus, membrane structure is quite suitable for heterogeneous integration. I will talk about our recent progress, focusing on ultralow-powerconsumption directly modulated lasers and their photonic integrated circuit. I will also describe progress in heterogeneous integration of these lasers and Si photonics devices.

Bio: Dr. Matsuo received a B.E. and M.E. degrees in electrical engineering from Hiroshima University, Hiroshima, Japan, in 1986 and 1988, and the Ph.D. degree in electronics and applied physics from Tokyo Institute of Technology, Tokyo, Japan, in 2008. In 1988, he joined NTT Optoelectronics Laboratories, Atsugi, where he was engaged in research on photonic functional devices using MQW-pin modulators and VCSELs. In 1997, he researched optical networks using WDM technologies at NTT Network Innovation Laboratories, Yokosuka. Since 2000, he has been researching InP-based photonic integrated circuits including fast tunable lasers and photonic crystal lasers at NTT Photonics Laboratories, Atsugi. Dr. Matsuo is a member of the IEEE Photonics Society, Japan Society of Applied Physics and the Institute of Electronics, Information and Communication Engineers (IEICE) of Japan.

Photonics North 2020
May 26 @ 08:00 – May 28 @ 17:00

On behalf of the conference organizing committee,
we invite you to the virtual Photonics North Conference on May 26-28,
2020.  In the midst of a global crisis,
we look forward to meeting with all of you, our colleagues, as we carry on with
the work of advancing optical science and engineering. Join us for outstanding
plenary talks from inspirational thought leaders. Join us for the very best
work from respected and established researchers. Join us for talks from
emerging researchers, presenting what is surely the opening work of brilliant,
burgeoning careers.

Photonics and optics are finally seeing widespread adoption and significant growth into new markets. Photonic devices are being applied to sensing, communications, and even quantum computing. High speed fiber optics and highly integrated subsystems are essential to the rollout of 5G systems. There has never been a better time for research, development, and training in photonics and Photonics North is essential for developing and promoting the ecosystem.


Conference Chairs

Gord Harling
President and CEO, CMC Microsystems       

P. Scott Carney
The Institute of Optics, University of Rochester​     

Aug 12 @ 12:00 – 13:00

Speaker:                Dr : Marin Soljacic, MIT

Date:                      Wednesday
Aug 12th, 2020

Time:                      12:00
noon to 13:00

Title of the talk:       Photonics:
a great testing-ground to develop new AI algorithms for science

Characterization and Modeling of GaN HEMT Trapping Effects for Microwave Circuit Design
Sep 2 @ 11:00 – 12:00


IEEE Ottawa Section: MTT-S / AP-S Chapter presents:

Title: Characterization and Modeling of GaN HEMT Trapping Effects for Microwave Circuit Design

Date: September 2nd, 2020

Time: 11 AM (ET)

Register at:

This talk will review some recent advancements achieved on the characterization and modelling of the trapping effects felt in GaN HEMT transistors, and their impact on microwave circuit design. Because of their nowadays importance, a particular attention will be payed to applications on high power amplifiers for mobile wireless infrastructure and pulsed radar applications.

For that, the talk will start by recollecting the most common model formulations adopted for the various levels of RF engineering, from the device level (physics) to the transistor (circuit) and amplifier (system) level. Starting by the Shockley-Read-Hall capture and emission processes we will be able to understand one of the fundamental signatures of trapping effects, the significantly different charge and discharging time constants, and its impact on power amplifier nonlinear distortion behavior. Then, some widely adopted approaches of the channel current transients’ characterization are addressed and the talk concludes by presenting some illustrative cases of application to RF high power amplifiers.

Speaker: Jose C. Pedro

José C. Pedro received the Diploma, Ph.D., and Habilitation degrees in electronics and telecommunications engineering from the Universidade de Aveiro, Aveiro, Portugal, in 1985, 1993, and 2002, respectively.

He is currently a Full Professor with the Universidade de Aveiro and head of the Aveiro site of the Instituto de Telecomunicações. He has authored 2 books and authored or co-authored more than 200 papers in international journals and symposia. His current research interests include active device modelling and the analysis and design of various nonlinear microwave circuits.

Dr. Pedro was a recipient of various prizes including the 1993 Marconi Young Scientist Award, the 2000 Institution of Electrical Engineers Measurement Prize, the 2015 EuMC Best Paper Microwave Prize, and the Microwave Distinguished Educator Award. He has served the scientific community as a Reviewer and an Editor for several conferences and journals, namely, the IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, for which he was the Editor-in-Chief.



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