Ottawa Life Member Affinity Group presents: Ottawa L5, the first integrated Connected & Autonomous Vehicle (CAV) test environment in North America.
The Ottawa L5 private test track is a 1,866 acre, fenced and gated private facility with 16 kilometres of paved roads. The largest secure test facility for CAVs in Canada, the Ottawa L5 private test track creates an ideal proving ground for the safe and productive pre-commercial development, testing, validation and demonstration of CAV technologies. The Ottawa L5 testing facilities are equipped with GPS (RTK), dedicated short range communications (DSRC), Wi-Fi, 4G/LTE and 5G telecommunications and networking infrastructure, making it the first integrated CAV test environment of its kind in North America. Find more information at: https://www.investottawa.ca/ottawal5
Tour will last about an hour involving a walk around the site and a group discussion of various technical aspects of the L5 facility. An additional treat is the possibility of an autonomous shuttle ride at the site for some attendees.
Please register in advance with email@example.com by Friday October 11. Priority will be given to Life members. All members and family are welcome. There is an online liability waiver to be signed. The link will be provided to registrants.
IEEE Ottawa Section: MTT-S / AP-S Chapter presents:
Title: Characterization and Modeling of GaN HEMT Trapping Effects for Microwave Circuit Design
Date: September 2nd, 2020
Time: 11 AM (ET)
Register at: https://events.vtools.ieee.org/m/238482
This talk will review some recent advancements achieved on the characterization and modelling of the trapping effects felt in GaN HEMT transistors, and their impact on microwave circuit design. Because of their nowadays importance, a particular attention will be payed to applications on high power amplifiers for mobile wireless infrastructure and pulsed radar applications.
For that, the talk will start by recollecting the most common model formulations adopted for the various levels of RF engineering, from the device level (physics) to the transistor (circuit) and amplifier (system) level. Starting by the Shockley-Read-Hall capture and emission processes we will be able to understand one of the fundamental signatures of trapping effects, the significantly different charge and discharging time constants, and its impact on power amplifier nonlinear distortion behavior. Then, some widely adopted approaches of the channel current transients’ characterization are addressed and the talk concludes by presenting some illustrative cases of application to RF high power amplifiers.
Speaker: Jose C. Pedro
José C. Pedro received the Diploma, Ph.D., and Habilitation degrees in electronics and telecommunications engineering from the Universidade de Aveiro, Aveiro, Portugal, in 1985, 1993, and 2002, respectively.
He is currently a Full Professor with the Universidade de Aveiro and head of the Aveiro site of the Instituto de Telecomunicações. He has authored 2 books and authored or co-authored more than 200 papers in international journals and symposia. His current research interests include active device modelling and the analysis and design of various nonlinear microwave circuits.
Dr. Pedro was a recipient of various prizes including the 1993 Marconi Young Scientist Award, the 2000 Institution of Electrical Engineers Measurement Prize, the 2015 EuMC Best Paper Microwave Prize, and the Microwave Distinguished Educator Award. He has served the scientific community as a Reviewer and an Editor for several conferences and journals, namely, the IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, for which he was the Editor-in-Chief.