The inaugural OSDforum will take place in Ottawa this September 18. It is of interest to System architects, software designers, hardware designers and researchers from government, industry and academia.
RISC-V is the 5th generation of the Reduced Instruction Set Computer (RISC-V) Instruction-Set Architecture (ISA), the OpenHW Group is a not-for-profit global organisation aiming to boost the adoption of open-source processors by providing a platform for collaboration, creating a focal point for ecosystem development, and offering open-source IP for processor cores.
Don’t miss out the opportunity to join this exciting new development platform and get your own RISC-V development board to keep. All this while learning from leading industry and academic experts focused on IoT, Edge and Machine Learning development that leverage open source SW and HW.
Space is limited and we have all indications that the event will sell out. Register today.
IEEE Ottawa Section: MTT-S / AP-S Chapter presents:
Title: Characterization and Modeling of GaN HEMT Trapping Effects for Microwave Circuit Design
Date: September 2nd, 2020
Time: 11 AM (ET)
Register at: https://events.vtools.ieee.org/m/238482
This talk will review some recent advancements achieved on the characterization and modelling of the trapping effects felt in GaN HEMT transistors, and their impact on microwave circuit design. Because of their nowadays importance, a particular attention will be payed to applications on high power amplifiers for mobile wireless infrastructure and pulsed radar applications.
For that, the talk will start by recollecting the most common model formulations adopted for the various levels of RF engineering, from the device level (physics) to the transistor (circuit) and amplifier (system) level. Starting by the Shockley-Read-Hall capture and emission processes we will be able to understand one of the fundamental signatures of trapping effects, the significantly different charge and discharging time constants, and its impact on power amplifier nonlinear distortion behavior. Then, some widely adopted approaches of the channel current transients’ characterization are addressed and the talk concludes by presenting some illustrative cases of application to RF high power amplifiers.
Speaker: Jose C. Pedro
José C. Pedro received the Diploma, Ph.D., and Habilitation degrees in electronics and telecommunications engineering from the Universidade de Aveiro, Aveiro, Portugal, in 1985, 1993, and 2002, respectively.
He is currently a Full Professor with the Universidade de Aveiro and head of the Aveiro site of the Instituto de Telecomunicações. He has authored 2 books and authored or co-authored more than 200 papers in international journals and symposia. His current research interests include active device modelling and the analysis and design of various nonlinear microwave circuits.
Dr. Pedro was a recipient of various prizes including the 1993 Marconi Young Scientist Award, the 2000 Institution of Electrical Engineers Measurement Prize, the 2015 EuMC Best Paper Microwave Prize, and the Microwave Distinguished Educator Award. He has served the scientific community as a Reviewer and an Editor for several conferences and journals, namely, the IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, for which he was the Editor-in-Chief.