Events

Dec
3
Tue
Advanced semiconductor lasers: Ultra-low operating energy and heterogeneous integration with Si photonics devices @ University of Ottawa, Room 223
Dec 3 @ 13:00 – 14:00

IEEE Photonics Society Distinguished Lecturer Program

Advanced semiconductor lasers:Ultra-low operating energy and heterogeneous integration with Si photonics devices

Shinji Matsuo, NTT Photonics Laboratories, Japan

Abstract: The electrical power consumed in data transmission systems is now hampering efforts to further increase the speed and capacity at various scales, ranging from data centers to microprocessors. Optical interconnects employing an ultralow energy directly modulated lasers will play a key role in reducing the power consumption. Since a laser’s operating energy is proportional to the size of its active volume, developing high-performance lasers with a small cavity is important. For this purpose, we have developed membrane DFB and photonic crystal (PhC) lasers, in which active regions are buried with InP layer. Thanks to the reduction of cavity size and the increase in optical confinement factor, we have achieved extremely small operating energy and demonstrated 4.4-fJ/bit operating energy by employing wavelength-scale PhC cavity. Reduction of the cost is also important issue because huge number of transmitters are required for short distance optical links. For this purpose, Si photonics technology is expected to be a potential solution because it can provide large-scale phonic integrated circuits (PICs), which can reduce the assembly cost compared with transmitters constructed by discrete devices. Therefore, heterogeneous integration of III-V compound semiconductors and Si has attracted much attention. For fabricating these devices, we have developed wafer-scale fabrication procedure that employs regrowth of III-V compound semiconductors on directly bonded thin InP template on SiO2/Si substrate. A key to realize high-quality epitaxial layer is total thickness, which must be below the critical thickness, typically 430 nm. Thus, membrane structure is quite suitable for heterogeneous integration. I will talk about our recent progress, focusing on ultralow-powerconsumption directly modulated lasers and their photonic integrated circuit. I will also describe progress in heterogeneous integration of these lasers and Si photonics devices.

Bio: Dr. Matsuo received a B.E. and M.E. degrees in electrical engineering from Hiroshima University, Hiroshima, Japan, in 1986 and 1988, and the Ph.D. degree in electronics and applied physics from Tokyo Institute of Technology, Tokyo, Japan, in 2008. In 1988, he joined NTT Optoelectronics Laboratories, Atsugi, where he was engaged in research on photonic functional devices using MQW-pin modulators and VCSELs. In 1997, he researched optical networks using WDM technologies at NTT Network Innovation Laboratories, Yokosuka. Since 2000, he has been researching InP-based photonic integrated circuits including fast tunable lasers and photonic crystal lasers at NTT Photonics Laboratories, Atsugi. Dr. Matsuo is a member of the IEEE Photonics Society, Japan Society of Applied Physics and the Institute of Electronics, Information and Communication Engineers (IEICE) of Japan.

May
26
Tue
Photonics North 2020
May 26 @ 08:00 – May 28 @ 17:00

On behalf of the conference organizing committee,
we invite you to the virtual Photonics North Conference on May 26-28,
2020.  In the midst of a global crisis,
we look forward to meeting with all of you, our colleagues, as we carry on with
the work of advancing optical science and engineering. Join us for outstanding
plenary talks from inspirational thought leaders. Join us for the very best
work from respected and established researchers. Join us for talks from
emerging researchers, presenting what is surely the opening work of brilliant,
burgeoning careers.

Photonics and optics are finally seeing widespread adoption and significant growth into new markets. Photonic devices are being applied to sensing, communications, and even quantum computing. High speed fiber optics and highly integrated subsystems are essential to the rollout of 5G systems. There has never been a better time for research, development, and training in photonics and Photonics North is essential for developing and promoting the ecosystem.

 

Conference Chairs

Gord Harling
President and CEO, CMC Microsystems       

P. Scott Carney
The Institute of Optics, University of Rochester​     

Aug
12
Wed
IEEE OTTAWA WEBINAR SERIES ON AI AND MACHINE LEARNING
Aug 12 @ 12:00 – 13:00

Speaker:                Dr : Marin Soljacic, MIT

Date:                      Wednesday
Aug 12th, 2020

Time:                      12:00
noon to 13:00

Title of the talk:       Photonics:
a great testing-ground to develop new AI algorithms for science

Sep
2
Wed
Characterization and Modeling of GaN HEMT Trapping Effects for Microwave Circuit Design
Sep 2 @ 11:00 – 12:00

 

IEEE Ottawa Section: MTT-S / AP-S Chapter presents:

Title: Characterization and Modeling of GaN HEMT Trapping Effects for Microwave Circuit Design

Date: September 2nd, 2020

Time: 11 AM (ET)

Register at: https://events.vtools.ieee.org/m/238482

This talk will review some recent advancements achieved on the characterization and modelling of the trapping effects felt in GaN HEMT transistors, and their impact on microwave circuit design. Because of their nowadays importance, a particular attention will be payed to applications on high power amplifiers for mobile wireless infrastructure and pulsed radar applications.

For that, the talk will start by recollecting the most common model formulations adopted for the various levels of RF engineering, from the device level (physics) to the transistor (circuit) and amplifier (system) level. Starting by the Shockley-Read-Hall capture and emission processes we will be able to understand one of the fundamental signatures of trapping effects, the significantly different charge and discharging time constants, and its impact on power amplifier nonlinear distortion behavior. Then, some widely adopted approaches of the channel current transients’ characterization are addressed and the talk concludes by presenting some illustrative cases of application to RF high power amplifiers.

Speaker: Jose C. Pedro

José C. Pedro received the Diploma, Ph.D., and Habilitation degrees in electronics and telecommunications engineering from the Universidade de Aveiro, Aveiro, Portugal, in 1985, 1993, and 2002, respectively.

He is currently a Full Professor with the Universidade de Aveiro and head of the Aveiro site of the Instituto de Telecomunicações. He has authored 2 books and authored or co-authored more than 200 papers in international journals and symposia. His current research interests include active device modelling and the analysis and design of various nonlinear microwave circuits.

Dr. Pedro was a recipient of various prizes including the 1993 Marconi Young Scientist Award, the 2000 Institution of Electrical Engineers Measurement Prize, the 2015 EuMC Best Paper Microwave Prize, and the Microwave Distinguished Educator Award. He has served the scientific community as a Reviewer and an Editor for several conferences and journals, namely, the IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, for which he was the Editor-in-Chief.

Sep
16
Wed
Opportunities, Challenges and Implementation of Silicon Integration and Packaging in mmWave Radar and Communication Applications
Sep 16 @ 17:00 – 18:00
Opportunities, Challenges and Implementation of Silicon Integration and Packaging in mmWave Radar and Communication                Applications

IEEE Distinguished Lecturer Presentation hosted jointly by the OTTAWA EMC/CPMT/ED/CAS/SSCS/AP/MTT Chapters:

Speaker : Dr. Xiaoxiong Gu, IBM T.J. Watson Research Center, NY
Topic : Opportunities, Challenges and Implementation of Silicon Integration and Packaging in mmWave Radar and Communication Applications
Date : Wednesday September 16, 2020
Time : 5:00 PM to 6:00 PM EST
Location : Online via ZOOM
Registration: Free, and is on a first to reply basis. Preference given to IEEE EMC CPMT/ED/CAS/SSCS/APS/MTT society members. E-mail Reservation is required.

Organizer: Dr. Syed Bokhari, Chairman, IEEE Ottawa EMC chapter
Syed.Bokhari@fidus.com,
Office :(613) 595 – 0507 Ext. 377, Cell: (613) 355 – 6632

Abstract: Co-design and integration of RFIC, package, and antennas are critical to enable multiple aspects of 5G communications (backhaul, last mile, mobile access) and are particularly challenging at mmWave frequencies. This talk will cover various important aspects of mmWave antenna module packaging and integration for base station, backhaul, and user equipment applications, respectively, with particular emphasis on signal, power and EMC integrity. We will first present a historical perspective on Si-based mmWave modules and approaches for antenna and IC integration including trade-offs. We will focus on the challenges, implementation, and characterization of a 28-GHz phased-array module with 64 dual polarized antennas for 5G base station applications. Second, we will present a W-band phased-array module with 64-element dual-polarization antennas for radar imaging and backhaul application. The module consists of a multilayer
organic chip-carrier package and a 16-element phased-array TX IC or a 32- element RX IC chipset. Third, we will describe a compact, low-power, 60-GHz switched-beam transceiver module suitable for handset integration incorporating four antennas that support both normal and end-fire directions for a wide link spatial coverage. Detailed signal, power and EMC modeling and analysis of the modules and the system are presented.

Speaker Bio:

Xiaoxiong Gu received the Ph.D. in electrical engineering from the University of Washington, Seattle, USA, in 2006. He joined IBM Research as a Research Staff Member in January 2007. His research activities are focused on 5G radio access technologies, optoelectronic and mm-wave packaging, electrical designs, modeling and characterization of communication, imaging radar and computation systems. He has recently worked on antenna-in-package design and integration for mm-wave imaging and communication systems including Ka-band, V-band and Wband phased-array modules. He has also worked on 3D electrical packaging and signal/power integrity analysis for high-speed I/O subsystems including onchip and off-chip interconnects. He has been involved in developing novel TSV
and interposer technologies for heterogeneous system integration.

Dr. Gu has authored over 90 peer-reviewed publications, 2 book chapters and holds 9 issued patents. He was a co-recipient of IEEE ISSCC 2017 Lewis Winner Award for Outstanding Paper and IEEE JSSC 2017 Best Paper Award (the world’s first reported silicon-based 5G mmWave phased array antenna module operating at 28GHz). He was a co-recipient of the 2017 Pat Goldberg Memorial Award to
the best paper in computer science, electrical engineering, and mathematics published by IBM Research. He received IBM Outstanding Research Accomplishment in 2019 and Outstanding Technical Achievement Award in 2016, four IBM Plateau Invention Awards in 2012 ~ 2016, the IEEE EMC Symposium Best Paper Award in 2013, two SRC Mahboob Khan Outstanding Industry Liaison Awards in 2012 and
2014, the Best Conference Paper Award at IEEE EPEPS in 2011, IEC DesignCon Paper Awards in 2008 and 2010, the Best Interactive Session Paper Award at IEEE DATE in 2008, and the Best Session Paper Award at IEEE ECTC in 2007. Dr. Gu is the co-chair of Professional Interest Community (PIC) on Computer System Designs at IBM. He is a Senior Member of IEEE and has been serving on different
program committees for MTT-S, EPEPS, ECTC, EDAPS and DesignCon. Dr. Gu was the General Chair of IEEE EPEPS 2018 in San Jose, CA. He is also a Distinguished Lecturer for IEEE EMC Society in 2019-2020 and is currently an Associate Editor for IEEE Transactions on Component, Packaging and Manufacturing Technology.

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