Events

May
18
Sat
Present Around The World (PATW) Competition @ 1125 Colonel By Dr, Ottawa, ON K1S 5B6
May 18 @ 11:00 – 13:00
Present Around The World (PATW) Competition @ 1125 Colonel By Dr, Ottawa, ON K1S 5B6 | Ottawa | Ontario | Canada

The PATW is a global competition for Young professionals and students within engineering to develop and showcase presentation skills. Membership to the IET is not a requirement to enter, but you must be 18-30 years of age and be prepared to;

Deliver a 10 minute presentation on any engineering or technology related area. Enhance your knowledge, develop your skills, increase your profile, and open doors for your career.

 

For more details see : https://www.theiet.org/PATW

Contact kyle.manel@ietvolunteer.org for event information and/or for registration.

Feb
20
Thu
Digital Marketing – Tools and Methodologies @ RA Centre
Feb 20 @ 19:30 – 21:00

Digital Marketing — Tools and Methodologies

Joint presentation IEEE Ottawa Section Consultants Network and IET Ottawa LN

Not your Grandmother’s Marketing – The impact of SaaS and AI

 Since Google’s arrival on the scene in the late 1990’s,
marketing took a turn to digital, never to look back again.  With the proliferation of technologies such
as Artificial Intelligence, and novel business models like
Software-as-a-Service (SaaS), marketing tools and techniques continue to
rapidly evolve.  Our eyes glued to
screens of devices of all sizes, we are at the same time a willing victim and a
reluctant participant in the marketing dance in both our professional and
personal lives.  These combined bring a
huge democratization of marketing for businesses, allowing for successful
growth in the most unlikely locations.

Speaker: Dobrila Rancic Moogk

Dobrila is VP Marketing at Giatec Scientific, an IoT company
revolutionizing concrete testing.
Through her work in and with start-ups on strategic marketing, Dobrila’s
passion for accelerating commercialization of innovation results in significant
growth and scale-up.  This is combined
with her drive to lead her university students to stellar career starts by
passing on her cutting-edge SaaS marketing skills to the next generation of
business leaders.

 Over her 25 years’
experience in the high-tech industry spanning North America
and Europe, she held marketing and R&D leadership
positions with dynamic corporations such as Bell-Northern Research, LSI
Logic, and MOSAID, among others.  Dobrila
has a BSEE, as well as Master of Engineering, and MBA degrees from University
of Ottawa.

 She is a member of
the Board of Directors of Invest Ottawa and Bayview Yards, the Community Impact
Cabinet at United Way East Ontario,
past chair of Volunteer Ottawa, and past vice-chair of the Women in Engineering
and Computer Science at University of
Ottawa.

Sep
2
Wed
Characterization and Modeling of GaN HEMT Trapping Effects for Microwave Circuit Design
Sep 2 @ 11:00 – 12:00

 

IEEE Ottawa Section: MTT-S / AP-S Chapter presents:

Title: Characterization and Modeling of GaN HEMT Trapping Effects for Microwave Circuit Design

Date: September 2nd, 2020

Time: 11 AM (ET)

Register at: https://events.vtools.ieee.org/m/238482

This talk will review some recent advancements achieved on the characterization and modelling of the trapping effects felt in GaN HEMT transistors, and their impact on microwave circuit design. Because of their nowadays importance, a particular attention will be payed to applications on high power amplifiers for mobile wireless infrastructure and pulsed radar applications.

For that, the talk will start by recollecting the most common model formulations adopted for the various levels of RF engineering, from the device level (physics) to the transistor (circuit) and amplifier (system) level. Starting by the Shockley-Read-Hall capture and emission processes we will be able to understand one of the fundamental signatures of trapping effects, the significantly different charge and discharging time constants, and its impact on power amplifier nonlinear distortion behavior. Then, some widely adopted approaches of the channel current transients’ characterization are addressed and the talk concludes by presenting some illustrative cases of application to RF high power amplifiers.

Speaker: Jose C. Pedro

José C. Pedro received the Diploma, Ph.D., and Habilitation degrees in electronics and telecommunications engineering from the Universidade de Aveiro, Aveiro, Portugal, in 1985, 1993, and 2002, respectively.

He is currently a Full Professor with the Universidade de Aveiro and head of the Aveiro site of the Instituto de Telecomunicações. He has authored 2 books and authored or co-authored more than 200 papers in international journals and symposia. His current research interests include active device modelling and the analysis and design of various nonlinear microwave circuits.

Dr. Pedro was a recipient of various prizes including the 1993 Marconi Young Scientist Award, the 2000 Institution of Electrical Engineers Measurement Prize, the 2015 EuMC Best Paper Microwave Prize, and the Microwave Distinguished Educator Award. He has served the scientific community as a Reviewer and an Editor for several conferences and journals, namely, the IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, for which he was the Editor-in-Chief.

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