Events

May
8
Wed
4th Annual ANSYS Innovation Conference @ Brook Street Hotel
May 8 @ 09:00 – 15:00
4th Annual ANSYS Innovation Conference @ Brook Street Hotel | Ottawa | Ontario | Canada

Innovation enables organizations to open new avenues of product differentiation by customizing products. In today’s rapidly changing business environment, engineers must innovate quickly to incorporate new features while reducing development costs and delivering new products to the market before the competition. Simulation plays a key role in helping engineers drive innovation, enabling complete virtual prototypes of complex systems to be validated across all physics and engineering disciplines.

Join us as we return to Ottawa for our 4th Annual ANSYS Innovation Conference on May 8, 2019! This one-day conference will provide detailed insight into how leading companies are utilizing simulation to advance their product development. We will bring together ANSYS users, partners, developers, and industry experts for networking, learning, and sharing of new ideas.

View Agenda

What You Will Learn

  • Experience new simulation capabilities that provide unprecedented design insight as they speed your time to market
  • Incorporate various productivity enhancement tools and techniques into your engineering department’s workflow
  • Gain insights into 5G system development with physics-based simulation and cover critical design issues, such as antenna performance, semiconductor reliability, and thermal integrity
  • Identify signal integrity issues early in the design cycle for electronics IC packages, PCBs, connectors and other complex interconnects
  • Modify antenna design, predict antenna efficiency and the overall thermal and EM performance of the product based on electromagnetic and thermal coupling solutions

 

May
14
Thu
Transceiver Architectures for Beyond-5G: Challenges and R&D Opportunities, co-organized with SSC-S
May 14 @ 12:00 – 13:00

Presented by IEEE MTT-S Distinguished Microwave Lecturer (DML) Talks:

Transceiver Architectures for Beyond-5G: Challenges and R&D Opportunities, co-organized with SSC-S

By
Dr. Payam Heydari
University of California, Irvine

Date: Thursday, May 14 , 2020

Time: 12:00 PM – 1 PM

Abstract:

The ongoing super-linear growth of world’s population coupled with the worldwide access to internet and the general public’s tendency to use more bandwidth-intensive applications fuel the urgency to enhance wireless infrastructures so as to meet these demands. Consequently, the wireless R&D is headed towards the inception of “Beyond-5G” (e.g., 6G) technology.  This webinar provides a comprehensive overview of challenges and opportunities in designing beyond-5G transceiver architectures capable of achieving high data rates above and beyond 20 Gbps. 

                                                                 Speaker Bio:

Payam Heydari received his Ph.D. degree from the University of Southern California in 2001. He is currently a Full Professor of Electrical Engineering at the University of California, Irvine. Dr. Heydari’s research covers the design of terahertz/millimeter-wave/RF and analog integrated circuits. He is the (co)-author of two books, one book chapter, and more than 150 journal and conference papers. 

Dr. Heydari is an AdCom member of the IEEE Solid-State Circuits Society. Dr. Heydari currently serves an Associate Editor for the IEEE Journal of Solid-State Circuits and the IEEE Solid-State Circuits Letters. He was a member of the Technical Program Committee of the International Solid-State Circuits Conference (ISSCC). Dr. Heydari is an IEEE Fellow for contributions to silicon-based millimeter-wave integrated circuits and systems.

 

                Event is free, but space is limited.  All participants must register in advance. For                                                  Registration: please use the following link



Jun
10
Wed
ACCELERATING 5G DESIGN INNOVATION THROUGH SIMULATION
Jun 10 @ 14:30 – 16:00
ACCELERATING 5G DESIGN INNOVATION THROUGH SIMULATION

Presented by the IEEE Ottawa Section MTT-S/AP-S Chapter & Young Professionals 

Accelerating 5G Design Innovation Through Simulation 

                                                                   By
Dr. Laila Salman 

                                                              Ansys Inc.

                                          Date: Wednesday, June 10, 2020

                                                Time: 2:30 PM – 4:00 PM

                                                                   Location: Online
                       

Abstract

5G connectivity is the next technological revolution. This pervasive, ultrafast compute network will connect billions of devices with data on-demand. It will drive economic expansion in many sectors, spawn new products and services, and transform our lives as we know it. Yet, before 5G can deliver on its promises and quality of service (QoS) metrics, wireless systems designers and engineers must overcome sizable challenges.  

Ansys 5G simulation solutions empower these individuals to solve the complexities impeding device, network and data center design. Ansys 5G simulation solutions provide electromagnetics, semiconductor, electronics cooling and mechanical analysis tools to accurately simulate 5G radio and related technologies. The multi-solution platform leverages high-performance computing that can be deployed across the enterprise, allowing designers and engineering experts to collaborate more effectively. 

This seminar will highlight the following 5G engineering challenges: 

·  End User Equipment  

    o   multi-frequency band antenna integration 

    o   modeling of mm-wave array antennas  

    o   RFI, EMI & Desense Mitigation 

·  Base-Station Antenna Modeling 

    o  Full Communication Analysis in Electrically Large & Complex Environment 

    o  RFI, Data Coverage & ElectroThermal Reliability 

 

Speaker Bio

Dr. Laila Salman received the B.S. and M.S. degrees in electronics and communication engineering from Cairo University, Egypt, and the PhD. Degree in electromagnetic and antenna design from the University of Mississippi. She also worked as a post-doctoral student at the Université de Quebec en Outaouais, Gatineau, Canada till 2010. Her research was on dielectric resonator antennas, wearable antennas, microwave and millimeter-wave circuits and systems, microwave imaging for early detection of breast cancer and scattering from left-handed metamaterials. Dr. Salman joined Ansys Canada Ltd. in August 2010 as a Lead Technical Services Specialist for High Frequency Applications.

RegistrationPlease use the link in the registration section to sign up for the event.

To join event use the following link.

Sep
2
Wed
Characterization and Modeling of GaN HEMT Trapping Effects for Microwave Circuit Design
Sep 2 @ 11:00 – 12:00

 

IEEE Ottawa Section: MTT-S / AP-S Chapter presents:

Title: Characterization and Modeling of GaN HEMT Trapping Effects for Microwave Circuit Design

Date: September 2nd, 2020

Time: 11 AM (ET)

Register at: https://events.vtools.ieee.org/m/238482

This talk will review some recent advancements achieved on the characterization and modelling of the trapping effects felt in GaN HEMT transistors, and their impact on microwave circuit design. Because of their nowadays importance, a particular attention will be payed to applications on high power amplifiers for mobile wireless infrastructure and pulsed radar applications.

For that, the talk will start by recollecting the most common model formulations adopted for the various levels of RF engineering, from the device level (physics) to the transistor (circuit) and amplifier (system) level. Starting by the Shockley-Read-Hall capture and emission processes we will be able to understand one of the fundamental signatures of trapping effects, the significantly different charge and discharging time constants, and its impact on power amplifier nonlinear distortion behavior. Then, some widely adopted approaches of the channel current transients’ characterization are addressed and the talk concludes by presenting some illustrative cases of application to RF high power amplifiers.

Speaker: Jose C. Pedro

José C. Pedro received the Diploma, Ph.D., and Habilitation degrees in electronics and telecommunications engineering from the Universidade de Aveiro, Aveiro, Portugal, in 1985, 1993, and 2002, respectively.

He is currently a Full Professor with the Universidade de Aveiro and head of the Aveiro site of the Instituto de Telecomunicações. He has authored 2 books and authored or co-authored more than 200 papers in international journals and symposia. His current research interests include active device modelling and the analysis and design of various nonlinear microwave circuits.

Dr. Pedro was a recipient of various prizes including the 1993 Marconi Young Scientist Award, the 2000 Institution of Electrical Engineers Measurement Prize, the 2015 EuMC Best Paper Microwave Prize, and the Microwave Distinguished Educator Award. He has served the scientific community as a Reviewer and an Editor for several conferences and journals, namely, the IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, for which he was the Editor-in-Chief.

Careers

Publications

Join IEEE or a Society

Member Services

IEEE Ottawa Section Logo

© Copyright 2020 IEEE – All rights reserved. Use of this website signifies your agreement to the IEEE Terms and Conditions.

A not-for-profit organization, IEEE is the world's largest technical professional organization dedicated to advancing technology for the benefit of humanity.