Events

Nov
28
Thu
Modern Day Applications of Power Electronics – Who Can Benefit? @ Room P208, Algonquin College
Nov 28 @ 18:00 – 20:00
Modern Day Applications of Power Electronics – Who Can Benefit? @ Room P208, Algonquin College | Ottawa | Ontario | Canada

Seminar by IEEE Ottawa Section, PELS, SSIT, RS-PEL, PES, Education Activities, Algonquin College IEEE Student Branch, ComSoc, CESoc, and BTS Ottawa Joint Chapter.

The IEEE Ottawa Section is inviting all interested IEEE members and nonmembers to a seminar

Modern Day Applications of Power Electronics – Who Can Benefit?

By 

Kalyan K. Sen

Sen Engineering Solutions, Inc.

DATE:

November 28th 2019

TIME:
Refreshments, Registration and Networking:
18:00;
Seminar:
18:30 – 20:00.

PLACE:
Algonquin College, Room P208, 1385 Woodroffe Ave., Ottawa.

PARKING:

Parking in Lots 8 and 9 after 5 p.m. is $5 flat rate, pay at a
machine and display the ticket on your dashboard.

 

ADMISSION:

Free. Registration required.

Please register by e-mail contacting: ottawapels@gmail.com

 

Abstract:

Application of power electronics is widespread in everyday life. Some applications are considered as “nice to have it;” in other cases, they are essential. This presentation discusses a wide variety of daily-used applications around the world. Also covered is an advanced topic, such as SMART Controller that today’s grid requires for voltage regulation, power factor regulation, unbalance voltage/current regulation, harmonic elimination and so on. A SMART Controller that is based on functional requirements and cost-effective solutions is derived from utilizing the best features of all the technical concepts that are developed until now. Final year students of electrical engineering undergraduate curriculum, post graduate students, researchers, academicians and utility engineers will benefit from attending this course. The participantswill hear from an expert who actually designed and commissioned a fewutility-grade SMART controllers since their inception in the 1990s.

 

Modern Day Applications of Power Electronics – Who Can Benefit
May
14
Thu
Transceiver Architectures for Beyond-5G: Challenges and R&D Opportunities, co-organized with SSC-S
May 14 @ 12:00 – 13:00

Presented by IEEE MTT-S Distinguished Microwave Lecturer (DML) Talks:

Transceiver Architectures for Beyond-5G: Challenges and R&D Opportunities, co-organized with SSC-S

By
Dr. Payam Heydari
University of California, Irvine

Date: Thursday, May 14 , 2020

Time: 12:00 PM – 1 PM

Abstract:

The ongoing super-linear growth of world’s population coupled with the worldwide access to internet and the general public’s tendency to use more bandwidth-intensive applications fuel the urgency to enhance wireless infrastructures so as to meet these demands. Consequently, the wireless R&D is headed towards the inception of “Beyond-5G” (e.g., 6G) technology.  This webinar provides a comprehensive overview of challenges and opportunities in designing beyond-5G transceiver architectures capable of achieving high data rates above and beyond 20 Gbps. 

                                                                 Speaker Bio:

Payam Heydari received his Ph.D. degree from the University of Southern California in 2001. He is currently a Full Professor of Electrical Engineering at the University of California, Irvine. Dr. Heydari’s research covers the design of terahertz/millimeter-wave/RF and analog integrated circuits. He is the (co)-author of two books, one book chapter, and more than 150 journal and conference papers. 

Dr. Heydari is an AdCom member of the IEEE Solid-State Circuits Society. Dr. Heydari currently serves an Associate Editor for the IEEE Journal of Solid-State Circuits and the IEEE Solid-State Circuits Letters. He was a member of the Technical Program Committee of the International Solid-State Circuits Conference (ISSCC). Dr. Heydari is an IEEE Fellow for contributions to silicon-based millimeter-wave integrated circuits and systems.

 

                Event is free, but space is limited.  All participants must register in advance. For                                                  Registration: please use the following link



Jun
10
Wed
ACCELERATING 5G DESIGN INNOVATION THROUGH SIMULATION
Jun 10 @ 14:30 – 16:00
ACCELERATING 5G DESIGN INNOVATION THROUGH SIMULATION

Presented by the IEEE Ottawa Section MTT-S/AP-S Chapter & Young Professionals 

Accelerating 5G Design Innovation Through Simulation 

                                                                   By
Dr. Laila Salman 

                                                              Ansys Inc.

                                          Date: Wednesday, June 10, 2020

                                                Time: 2:30 PM – 4:00 PM

                                                                   Location: Online
                       

Abstract

5G connectivity is the next technological revolution. This pervasive, ultrafast compute network will connect billions of devices with data on-demand. It will drive economic expansion in many sectors, spawn new products and services, and transform our lives as we know it. Yet, before 5G can deliver on its promises and quality of service (QoS) metrics, wireless systems designers and engineers must overcome sizable challenges.  

Ansys 5G simulation solutions empower these individuals to solve the complexities impeding device, network and data center design. Ansys 5G simulation solutions provide electromagnetics, semiconductor, electronics cooling and mechanical analysis tools to accurately simulate 5G radio and related technologies. The multi-solution platform leverages high-performance computing that can be deployed across the enterprise, allowing designers and engineering experts to collaborate more effectively. 

This seminar will highlight the following 5G engineering challenges: 

·  End User Equipment  

    o   multi-frequency band antenna integration 

    o   modeling of mm-wave array antennas  

    o   RFI, EMI & Desense Mitigation 

·  Base-Station Antenna Modeling 

    o  Full Communication Analysis in Electrically Large & Complex Environment 

    o  RFI, Data Coverage & ElectroThermal Reliability 

 

Speaker Bio

Dr. Laila Salman received the B.S. and M.S. degrees in electronics and communication engineering from Cairo University, Egypt, and the PhD. Degree in electromagnetic and antenna design from the University of Mississippi. She also worked as a post-doctoral student at the Université de Quebec en Outaouais, Gatineau, Canada till 2010. Her research was on dielectric resonator antennas, wearable antennas, microwave and millimeter-wave circuits and systems, microwave imaging for early detection of breast cancer and scattering from left-handed metamaterials. Dr. Salman joined Ansys Canada Ltd. in August 2010 as a Lead Technical Services Specialist for High Frequency Applications.

Registration: Please use the link in the registration section to sign up for the event.

To join event use the following link.

Jul
7
Tue
A Novel Maximum Power Point Tracking (MPPT) Technique for Photovoltaic Solar Panels
Jul 7 @ 18:00 – 19:30
A Novel Maximum Power Point Tracking (MPPT) Technique for Photovoltaic Solar Panels

The IEEE Reliability Society & Power Electronics
Society is inviting all interested IEEE members and prospective members to a
webinar

 

A Novel Maximum Power Point Tracking (MPPT) Technique for Photovoltaic Solar Panels

By

 

Mahdi Ranjbar

DATE:       July 7, 2020

TIME:        18 19:30.

       

A
novel Maximum Power Point Tracking (MPPT) technique for photovoltaic (PV)
solar panels will be presented.  Current
sensors are costly components. They also require a signal conditioning
circuitry to reduce the noise and condition the signal to be sampled and used
by the controller.  Th
is
method takes advantage of the non-linearity of the I-V curve of the solar panel
to
find the MPP
. By injecting high-frequency perturbation signals and
monitoring the system behavior current sensing used for controlling of MPPT
is eliminated. This elimination can reduce the cost of MPPT circuitry. The proposed method also shows a very fast tracking response due to the use of high-frequency signals instead of relying on low frequency and DC signals which are used in the traditional methods. Numerical analysis, simulation results, and experimental results verify the feasibility of the proposed technique will be shown.

 

Mahdi
Tude Ranjbar received his bachelor’s degree from the University of Tehran,
Iran (2017). In this period, his main focus was on collaboration with different laboratories in ECE and Mechanical engineering departments. He started his M.A.Sc degree in 2018 at Queen’s, Canada with a focus on improving the efficiency of the solar system power generation techniques.  Since March 2020, Mr. Ranjbar has joined the System
Architecture group at HUADA Semiconductors where his main focus is designing power applications using Huada’s microcontrollers, gate drivers and current sense amplifiers.


Please
register here:
 https://events.vtools.ieee.org/tego_/event/manage/233724

A link will be sent to you a day before the event.

 

Sep
2
Wed
Characterization and Modeling of GaN HEMT Trapping Effects for Microwave Circuit Design
Sep 2 @ 11:00 – 12:00

 

IEEE Ottawa Section: MTT-S / AP-S Chapter presents:

Title: Characterization and Modeling of GaN HEMT Trapping Effects for Microwave Circuit Design

Date: September 2nd, 2020

Time: 11 AM (ET)

Register at: https://events.vtools.ieee.org/m/238482

This talk will review some recent advancements achieved on the characterization and modelling of the trapping effects felt in GaN HEMT transistors, and their impact on microwave circuit design. Because of their nowadays importance, a particular attention will be payed to applications on high power amplifiers for mobile wireless infrastructure and pulsed radar applications.

For that, the talk will start by recollecting the most common model formulations adopted for the various levels of RF engineering, from the device level (physics) to the transistor (circuit) and amplifier (system) level. Starting by the Shockley-Read-Hall capture and emission processes we will be able to understand one of the fundamental signatures of trapping effects, the significantly different charge and discharging time constants, and its impact on power amplifier nonlinear distortion behavior. Then, some widely adopted approaches of the channel current transients’ characterization are addressed and the talk concludes by presenting some illustrative cases of application to RF high power amplifiers.

Speaker: Jose C. Pedro

José C. Pedro received the Diploma, Ph.D., and Habilitation degrees in electronics and telecommunications engineering from the Universidade de Aveiro, Aveiro, Portugal, in 1985, 1993, and 2002, respectively.

He is currently a Full Professor with the Universidade de Aveiro and head of the Aveiro site of the Instituto de Telecomunicações. He has authored 2 books and authored or co-authored more than 200 papers in international journals and symposia. His current research interests include active device modelling and the analysis and design of various nonlinear microwave circuits.

Dr. Pedro was a recipient of various prizes including the 1993 Marconi Young Scientist Award, the 2000 Institution of Electrical Engineers Measurement Prize, the 2015 EuMC Best Paper Microwave Prize, and the Microwave Distinguished Educator Award. He has served the scientific community as a Reviewer and an Editor for several conferences and journals, namely, the IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, for which he was the Editor-in-Chief.

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