Improved Drain-Source Current Model for HEMTs with Accurate Gm Fitting in
All Regions

Dr. Jianguo Ma
Changjiang (Yangtze River) Professor
University of Electronic Sciences and Technology of China
Chengdu, China

Abstract: In this talk, an improved drain-source current (I-V) model for
HEMTs is proposed.  The model is simple, easy to extract, and convenient
for implementation in simulation tools.
A single modeling equation is developed, allowing accurate prediction of
both static and dynamic I-V characteristics. The model parameters can be
extracted to match the measured data closely for a wide bias range without
sacrificing accuracy. It is validated through DC as well as power
measurements using GaAs HEMT transistors.
Also included in the presentation, will be a brief overview of the new
IEEE Section recently created in Chengdu, China. Chengdu is becoming one
of the fastest growing hubs for electronic research and development in
China. As a founding member of the IEEE Section and the founding Chair of
the Chengdu Chapter of IEEE Electronic Device Society, Professor Ma will
give an insider ’s perspective of the new IEEE Chengdu Section, and the
electronic research and education in the University of Electronic
Sciences and Technology of China.
Biography: Professor Jianguo MA received his doctoral degree
in Engineering (Dr.-Ing) from Duisburg University, Germany in 1996, under
the supervision of Prof. Ingo Wolff. He was with Technical University of
Nova Scotia (now part of Dalhousie University) from April 1996 to Sept
1997. Dr. Ma joined Nanyang Technological University of Singapore in
October 1997 as a faculty member and founding Director of the Center for
Integrated Circuits & Systems. He joined the University of Electronic
Science and Technology of China in December 2005 with a starting research
award of US $2 millions for creating his labs. With this funding, he has
established the Advanced Semiconductor Device Characterizations and
Modeling Lab and On-wafer Testing for RFICs Lab, among the best equipped
of its kind in Chinese Universities.
He currently supervises more than 40 Master and PhD students.
His research areas include RFICs/MMICs and applications; Characterizations
and modeling for devices, interconnects and RF packaging; EMC/EMI for
wireless; and Wireless sensing networks and applications.  He has
published 240 technical papers, two books, and 7 US patents granted.
He was the Associate Editor for IEEE Microwave and Wireless Components
Letters (2003~2005). He is a founding member of IEEE Chengdu Section and
Founding Chair for IEEE EDS Chengdu Chapter.
Prof. Ma is a Changjiang (Yangtze River) Professor awarded by the Ministry
of Education of China. He is a recipient of the Young Investigator Award by
the National Science Foundation of China.